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PF00105A
MOS FET Power Amplifier Module for AMPS Handy Phone
ADE-208-447C (Z) 4th Edition February 1998 Features
* * * * * Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 A Typ
Pin Arrangement
* RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
G
1
G
G
Absolute Maximum Ratings (Tc = 25C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 1 4.5 20 -30 to +100 -30 to +100 2 Unit V A V mW C C W
PF00105A
Electrical Characteristics (Tc = 25C)
Item Frequency range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Symbol f I DS T 2nd H.D. 3rd H.D. VSWR (in) Pout Min 824 -- 45 -- -- -- 1.0 Typ -- -- 48 -40 -40 1.5 1.1 Max 849 20 -- -30 -30 3.0 -- Unit MHz A % dBc dBc -- W Pin = +8 dBm, V DD = 4.6 V, VAPC = 3 V, RL = Rg = 50, Tc = 25C Pin = +8 dBm, V DD = 4.6 V, VAPC = 0.1 V, RL = Rg = 50, Tc = 25C Pin = +8 dBm, V DD = 4.3 to 6 V, Pout 1.2 W (at APC controlled), Rg = 50 , Tc = 25C, Output VSWR = 3 : 1 All phases Pin = +8 dBm, V DD = 4.3 to 6 V, Pout 1.2 W (at APC controlled), Rg = 50 , Tc = 25C, Output VSWR = 10 : 1 All phases Test Condition -- VDD = 7 V, VAPC = 0 V Pin = +8 dBm, V DD = 4.6 V, Pout = 1 W (at APC controlled) RL = Rg = 50, Tc = 25C
Isolation
--
--
-20
+6
dBm
Stability
--
No parasitic oscillation
--
Load VSWR tolerance
--
No parasitic oscillation
--
2
PF00105A
Characteristic Curves
T vs. Tc Pin=+7dBm Vdd=4.6V Pout=1W 55 824MHz 849MHz
60
T (%)
50
45
40 -50
0 Tc (C) Pout vs. Tc
50
100
1.6 Pin=+7dBm Vdd=4.6V 1.5 Vapc=2.9V 1.4 Pout(1) (W) 1.3 1.2 1.1 1 0.9 0.8 -50 824MHz 849MHz
0 Tc (C)
50
100
3
PF00105A
Pout vs. Pin (1) 31.8 Vdd=4.6V Vapc=2.9V Tc=-30C 31.6 Pout(1) (dBm) 824MHz 836.5MHz 849MHz
31.4
31.2
31 4 6 Pin (dBm) Pout vs. Pin (2) 31.4 Vdd=4.6V Vapc=2.9V Tc=25C 31.2 Pout(1) (dBm) 824MHz 836.5MHz 849MHz 8 10
31
30.8
30.6 4 6 Pin (dBm) 8 10
4
PF00105A
Pout vs. Pin (3) 31 Vdd=4.6V Vapc=2.9V Tc=60C 30.8 Pout(1) (dBm) 824MHz 836.5MHz 849MHz
30.6
30.4
30.2 4 6 Pin (dBm) Id vs. Vapc (1) 700 Pin=+7dBm Vdd=4.6V 600 Tc=-30C 824MHz 836.5MHz 500 849MHz Id (mA) 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 4 4.5 5 8 10
5
PF00105A
Id vs. Vapc (2) 700 Pin=+7dBm Vdd=4.6V 600 Tc=25C 824MHz 836.5MHz 500 849MHz Id (mA) 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 Vapc (V) Id vs. Vapc (3) 700 Pin=+7dBm Vdd=4.6V 600 Tc=60C 824MHz 836.5MHz 500 849MHz Id (mA) 400 300 200 100 0 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 4 4.5 5 2.5 4 4.5 5
6
PF00105A
Pout vs. Vapc (1) 40 Pin=+7dBm Vdd=4.6V 30 Tc=-30C 20 Pout (dBm) 10 0 -10 -20 -30 -40 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 824MHz 836.5MHz 849MHz 4 4.5 5
Pout vs. Vapc (2) 40 Pin=+7dBm Vdd=4.6V 30 Tc=25C 20 Pout (dBm) 10 0 -10 -20 -30 -40 0 0.5 1 1.5 2 2.5 3 Vapc (V) 2.5 824MHz 836.5MHz 849MHz 4 4.5 5
7
PF00105A
Pout vs. Vapc (3) 40 Pin=+7dBm Vdd=4.6V 30 Tc=60C 20 Pout (dBm) 10 0 -10 -20 -30 -40 0 0.5 1 1.5 2 2.5 3 Vapc (V) Pout vs. Vdd (1) 34 f=824MHz Pin=+7dBm Tc=25C 33 Vapc=2.5V Vapc=2.9V Vapc=4.6V Pout (dBm) 32 2.5 824MHz 836.5MHz 849MHz 4 4.5 5
31
30
29 3.5
4
4.5 5 Vdd (V)
5.5
6
8
PF00105A
Pout vs. Vdd (2) 34 f=836.5MHz Pin=+7dBm Tc=25C 33 Vapc=2.5V Vapc=2.9V Vapc=4.6V Pout (dBm) 32
31
30
29 3.5
4
4.5 5 Vdd (V) Pout vs. Vdd (3)
5.5
6
34 f=849MHz Pin=+7dBm Tc=25C 33 Vapc=2.5V Vapc=2.9V Vapc=4.6V Pout (dBm) 32
31
30
29 3.5
4
4.5 5 Vdd (V)
5.5
6
9
PF00105A
Package Dimensions
Unit: mm 1.8 0.2
4 8.0 0.3 (7.8)
G
G
3
1
G
G
2 3 GG G2
(Upper side) 4 13.75 0.3 (9.6) (3.7) (2.1) 1 G G 2
8.0 0.3
1
G
(3.7)
4
G
G
3
(1.8)(1.3)(1.8)(1.6)(1.8)(1.3)(1.8) (2.225) (6.875) 13.75 0.3 (Bottom side) (2.975) (6.875) Remark: Coplanarity of bottom side of terminals are less than 0 0.1mm.
Hitachi Code JEDEC EIAJ Weight (reference value) RF-K
10
(2.1)
(0.6)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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